Exhibit 10.25
AMENDMENT to the
AGREEMENT FOR WAFER PRODUCTION
AND TESTING
between
Advanced Power
Technology
405 S.W. Columbia Street, Bend,
Oregon, USA
and
Infineon Technologies Austria
AG
Siemensstr. 2 , 9500 Villach,
Austria
This Amendment is effective as of the 1st day of
April, 2004 and remains in effect through March 31,
2005.
WHEREAS, Advanced Power Technology (hereinafter
“APT”) and Siemens Aktiengesellschaft (hereinafter
“Siemens”) entered into the Agreement for Wafer
Production and Testing on February 11, 1998 (hereinafter
“Basic Agreement”);
WHEREAS , the Basic Agreement was amended in the
Amendment to the Agreement for Wafer Production and Testing
(hereinafter “Amendment”) between APT and Infineon
Technologies AG, Munich, Germany, the latter being the legal
successor of Siemens, on July 19, 2000 (both Agreements to be
referred hereafter as “Agreements”); The primary
purpose of the amendment being to
•
agree to a more formal set of
communications for all matters relative to these
agreements.
•
fix capacity by month committed to
APT in terms of W afer S tarts P er W
eek (wspw) thru September 2001.
•
fix wafer/die pricing through
September 2001 on a [ * ] wspw basis and establish annual
negotiations thereafter.
•
express Infineon’s consent to
have the amendment filed with the US SEC.
WHEREAS , both Agreements were amended February 5, 2001
by an Extension Agreement (also to be referred to hereafter as
“Agreements”); The primary purpose of this amendment
being to
•
extend the scope of the Agreement to
include APT’s MOSVI and MOSVII technologies and deliver
wafers to APT based on these processes accordingly;
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
WHEREAS , both Agreements were amended January 1,
2002
•
revised wafer/die pricing for
wafer/die shipments to APT during C alendar Y ear
(CY) 2002. (January 1, 2002 thru December 31, 2002)
•
a minimum wspw volume guarantee by
APT.
•
an additional price reduction
opportunity for APT in the form of a rebate if the total number of
wafers started in CY2002 meets or exceeds a predetermined
quantity.
WHEREAS , the previous agreements were amended on
January 6, 2003 to
•
extend the scope of the Agreements
to include APT’s MosVII IGBT technology and deliver wafers
processed to a mutually agreed upon process flow to APT based on
these processes accordingly
•
agree that during the transfer
period of the MosVII IGBT process a cost of [ * ] will be shared [
* ] between APT and Infineon, billed to APT on a monthly
basis.
WHEREAS , the previous agreements and amendments are
assigned from Infineon Technologies AG, Munich, Germany, to
Infineon Technologies Austria AG (hereinafter “Infineon
Austria”)
NOW ,
THEREAFTER , based on mutual promises contained herein and
intending to be legally bound, the parties agree to the following
terms and conditions:
1. Die prices for MosV technology will increase by
[ * ] effective June 1, 2004 as reflected in Exhibit A.
2. Wafer prices for Mos6&7, Mosfet & IGBT
technology will increase by [ * ] effective June 1, 2004 as
reflected in Exhibit A.
3. The Minimum Volume Commitment of APT stays at [
* ] wspw and start rules guided by the first week starts being
fixed, the next 7 weeks allowed delta being [ * ], the following 5
weeks allowed delta being [ * ], and no limits to the % delta after
that, apply.
4. Infineon Austria will use commercially
reasonable efforts to support APT’s requirements in the event
that a weekly capacity of more than [ * ] wspw is required within
the rules of forecast changes defined in paragraph 3
above.
5. Notwithstanding paragraph 3 above, Infineon
commits as a minimum the following capacity to APT.
a. April’04 – June’04,
“2Q04”, [ * ] wspw.
b. July’04 – September’04,
“3Q04”, [ * ] wspw.
c. October’04 – December’04,
“4Q04”, [ * ] wspw
d. January’05 – March’05,
“1Q05”, [ * ] wspw.
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
6. In case no agreement can be achieved during the
next annual negotiation by the end of March 2005 the prices and
volumes based on the latest confirmed monthly forecast will
continue to apply. Prices then in existence are those in place at
the time of that annual negotiation, the volumes confirmed in the
latest monthly forecast define the maximum capacity commitment of
Infineon to APT for the consecutive 6 months beginning April 1,
2005 and will be [ * ] wspw for following 6 months. During this
period APT agrees to start a minimum of [ * ] WSPW including wafers
started on a “risk basis” as defined in prior
agreements.
MISCELLANEOUS
7. Infineon Austria hereby expressly gives its
consent to have this agreement filed with the US SEC with the
understanding that confidential information such as that related to
pricing, volume, and other special arrangements be
omitted.
8. Except as otherwise explicitly amended in
paragraphs 1 to 6 above, the terms and conditions of the Basic
Agreement and its prior Amendments shall remain in full force and
effect.
ADVANCED POWER TECHNOLOGY
INFINEON TECHNOLOGIES Austria
AG
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By
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Patrick Sireta
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By
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Arunjai Mittal
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Date
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Date
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By
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Russell Crecraft
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By
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Andreas Urschitz
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Date
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Date
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[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
Exhibit A
|
APT
MOSV
TYPE
|
|
Infineon
TYPE
|
|
Die Price
effective
1-Jan-02
|
|
Die Price
effective
1-Jun-04
|
|
|
515-040
|
|
C9000A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
515-050
|
|
C9000A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
515-060
|
|
C9000A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
515-060
|
|
C9000A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
596-080
|
|
C9001A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
566-040
|
|
C9002A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
566-050
|
|
C9002A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
566-060
|
|
C9002A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
576-080
|
|
C9003A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
576-100
|
|
C9003A01011
|
|
[ * ]
|
|
[ * ]
|
|
|
576-120
|
|
C9003A01211
|
|
[ * ]
|
|
[ * ]
|
|
|
5F6-010
|
|
C9004A00111
|
|
[ * ]
|
|
[ * ]
|
|
|
5F6-020
|
|
C9004A00211
|
|
[ * ]
|
|
[ * ]
|
|
|
5F6-030
|
|
C9004A00311
|
|
[ * ]
|
|
[ * ]
|
|
|
546-040
|
|
C9005A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
546-050
|
|
C9005A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
546-060
|
|
C9005A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
5K6-010
|
|
C9006A00111
|
|
[ * ]
|
|
[ * ]
|
|
|
5K6-020
|
|
C9006A00211
|
|
[ * ]
|
|
[ * ]
|
|
|
5K6-030
|
|
C9006A00311
|
|
[ * ]
|
|
[ * ]
|
|
|
556-040
|
|
C9007A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
556-050
|
|
C9007A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
556-060
|
|
C9007A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
586-080
|
|
C9008A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
586-100
|
|
C9008A01011
|
|
[ * ]
|
|
[ * ]
|
|
|
586-120
|
|
C9008A01211
|
|
[ * ]
|
|
[ * ]
|
|
|
5F7-040
|
|
C9009A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
5F7-050
|
|
C9009A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
5F7-060
|
|
C9009A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
547-010
|
|
C9010A00111
|
|
[ * ]
|
|
[ * ]
|
|
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
|
APT
MOSV
TYPE
|
|
Infineon
TYPE
|
|
Die Price
effective
1-Jan-02
|
|
Die Price
effective
1-Jun-04
|
|
|
547-020
|
|
C9010A00211
|
|
[ * ]
|
|
[ * ]
|
|
|
547-030
|
|
C9010A00311
|
|
[ * ]
|
|
[ * ]
|
|
|
527-040
|
|
C9011A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
527-050
|
|
C9011A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
527-060
|
|
C9011A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
557-080
|
|
C9012A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
557-100
|
|
C9012A01011
|
|
[ * ]
|
|
[ * ]
|
|
|
557-120
|
|
C9012A01211
|
|
[ * ]
|
|
[ * ]
|
|
|
538-010
|
|
C9013A00111
|
|
[ * ]
|
|
[ * ]
|
|
|
538-020
|
|
C9013A00211
|
|
[ * ]
|
|
[ * ]
|
|
|
538-030
|
|
C9013A00311
|
|
[ * ]
|
|
[ * ]
|
|
|
528-040
|
|
C9014A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
528-050
|
|
C9014A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
528-060
|
|
C9014A00611
|
|
[ * ]
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|
[ * ]
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|
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548-080
|
|
C9015A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
548-100
|
|
C9015A01011
|
|
[ * ]
|
|
[ * ]
|
|
|
548-120
|
|
C9015A01211
|
|
[ * ]
|
|
[ * ]
|
|
|
548-140
|
|
C9015A1411
|
|
[ * ]
|
|
[ * ]
|
|
|
577-040
|
|
C9016A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
577-050
|
|
C9016A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
577-060
|
|
C9016A00611
|
|
[ * ]
|
|
[ * ]
|
|
|
5K7-010
|
|
C9017A00111
|
|
[ * ]
|
|
[ * ]
|
|
|
5K7-020
|
|
C9017A00211
|
|
[ * ]
|
|
[ * ]
|
|
|
5K7-030
|
|
C9017A00311
|
|
[ * ]
|
|
[ * ]
|
|
|
587-080
|
|
C9018A00811
|
|
[ * ]
|
|
[ * ]
|
|
|
587-100
|
|
C9018A01011
|
|
[ * ]
|
|
[ * ]
|
|
|
587-120
|
|
C9018A01211
|
|
[ * ]
|
|
[ * ]
|
|
|
558-400
|
|
C9019A00411
|
|
[ * ]
|
|
[ * ]
|
|
|
558-500
|
|
C9019A00511
|
|
[ * ]
|
|
[ * ]
|
|
|
558-600
|
|
C9019A00611
|
|
[ * ]
|
|
[ * ]
|
|
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
|
MOSVI
Voltage
|
|
Wafer Price
effective
1-Jan-02
|
|
Wafer Price
effective
1-Jun-04
|
|
|
100
|
|
[ * ]
|
|
[ * ]
|
|
|
200
|
|
[ * ]
|
|
[ * ]
|
|
|
300
|
|
[ * ]
|
|
[ * ]
|
|
|
400
|
|
[ * ]
|
|
[ * ]
|
|
|
500
|
|
[ * ]
|
|
[ * ]
|
|
|
600
|
|
[ * ]
|
|
[ * ]
|
|
|
800
|
|
[ * ]
|
|
[ * ]
|
|
|
1000
|
|
[ * ]
|
|
[ * ]
|
|
|
1200
|
|
[ * ]
|
|
[ * ]
|
|
|
MOSVII
Mosfet
Voltage
|
|
Wafer Price
effective
1-Jan-02
|
|
Wafer Price
effective
1-Jun-04
|
|
|
100
|
|
[ * ]
|
|
[ * ]
|
|
|
200
|
|
[ * ]
|
|
[ * ]
|
|
|
300
|
|
[ * ]
|
|
[ * ]
|
|
|
400
|
|
[ * ]
|
|
[ * ]
|
|
|
500
|
|
[ * ]
|
|
[ * ]
|
|
|
550
|
|
[ * ]
|
|
[ * ]
|
|
|
600
|
|
[ * ]
|
|
[ * ]
|
|
|
800
|
|
[ * ]
|
|
[ * ]
|
|
|
1000
|
|
[ * ]
|
|
[ * ]
|
|
|
1100
|
|
[ * ]
|
|
[ * ]
|
|
|
1200
|
|
[ * ]
|
|
[ * ]
|
|
|
MOSVII
IGBT Voltage
|
|
Wafer Price
effective
1-Jan-02
|
|
Wafer Price
effective
1-Jun-04
|
|
|
300
|
|
[ * ]
|
|
[ * ]
|
|
|
600
|
|
[ * ]
|
|
[ * ]
|
|
|
900
|
|
[ * ]
|
|
[ * ]
|
|
|
1000
|
|
[ * ]
|
|
[ * ]
|
|
|
1200
|
|
[ * ]
|
|
[ * ]
|
|
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
AMENDMENT to the
AGREEMENT FOR WAFER PRODUCTION
AND TESTING
between
Advanced Power
Technology
and
Infineon Technologies
AG
This Amendment is effective as of the 1
st day of January, 2003.
WHEREAS, Advanced Power Technology (hereinafter
“APT”) and Siemens Aktiengesellschaft (hereinafter
“Siemens”) entered into the Agreement for Wafer
Production and Testing on February 11, 1998 (hereinafter
“Basic Agreement”);
WHEREAS , the Basic Agreement was amended in the
Amendment to the Agreement for Wafer Production and Testing
(hereinafter “Amendment”) between APT and Infineon
Technologies AG (hereinafter “Infineon”), the latter
being the legal successor of Siemens, on July 19, 2000 (both
Agreements to be referred hereafter as “Agreements”);
The primary purpose of the amendment being to
•
agree to a more formal set of
communications for all matters relative to these
agreements.
•
fix capacity by month committed to
APT in terms of W afer S tarts P er W
eek (wspw) thru September 2001.
•
fix wafer/die pricing through
September 2001 on a [ * ] wspw basis and establish annual
negotiations thereafter.
•
express Infineon’s consent to
have the amendment filed with the US SEC.
WHEREAS , both Agreements were amended February 5, 2001
by an Extension Agreement (also to be referred to hereafter as
“Agreements”); The primary purpose of this amendment
being to
•
extend the scope of the Agreement to
include APT’s MOSVI and MOSVII technologies and deliver
wafers to APT based on these processes accordingly;
WHEREAS , both Agreements were amended January 1,
2002
•
revised wafer/die pricing for
wafer/die shipments to APT during C alendar Y ear
(CY) 2002. (January 1, 2002 thru December 31, 2002)
•
a minimum wspw volume guarantee by
APT.
•
an additional price reduction
opportunity for APT in the form of a rebate if the total number of
wafers started in CY2002 meets or exceeds a predetermined
quantity.
[ * ] = CONFIDENTIAL TREATMENT
REQUESTED
WHEREAS , both companies desire to extend the scope of
the Agreements to include APT’s MosVII IGBT technology and
deliver wafers processed to a mutually agreed upon process flow to
APT based on these processes accordingly.
NOW ,
THEREAFTER , based on mutual promises contained herein and
intending to be legally bound, the parties agree to the following
terms and conditions:
1. The MosVII IGBT wafer pricing is set forth in
the following table.
|
MOSVII
IGBT Voltage
|
|
Wafer Price
effective
|
|
|
600
|
|
[ * ]
|
|
|
900
|
|
[ * ]
|
|
|
1000
|
|
[ * ]
|
|
|
1200
|
|
[ * ]
|
|
2. APT agrees that during the transfer period of
the MosVII IGBT process a cost of [ * ] will be shared [ * ]
between APT and Infineon, billed to APT on a monthly
basis.
3. Infineon hereby expressly gives its consent to
have this agreement filed with the US SEC w